to ? 92 1.emitter 2.collector 3.base to-92 plastic-encapsulate transistors STA124 transistor (pnp) features z suitable for low voltage large current drivers z high dc current gain and large current capability z complementary pair with stc128 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -15 v v ceo collector-emitter voltage -12 v v ebo emitter-base voltage -6.5 v i c collector current -1 a p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 /w t j junction temperature 150 t stg storage temperature -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50 a, i e =0 -15 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -12 v emitter-base breakdown voltage v (br)ebo i e =-50 a, i c =0 -6.5 v collector cut-off current i cbo v cb =-15v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-6v, i c =0 -0.1 a dc current gain h fe v ce =-1v, i c =-100ma 200 450 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma -0.4 v transition frequency f t v ce =-5v,i c =-50ma 260 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz 5 pf 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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